au.\*:("DINGES HW")
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OPTICAL PROPERTIES OF ANODIC OXIDE FILMS ON GAAS BY ELLIPSOMETRY.DINGES HW.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 50; PP. L17-L20; BIBL. 9 REF.Article
AN ELLIPSOMETRIC STUDY OF SIO2/SI3N4 DOUBLE LAYERS ON SILICON PRODUCED BY CHEMICAL VAPOUR DEPOSITIONDINGES HW.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 78; NO 4; PP. L63-L66; BIBL. 7 REF.Article
COMPOSITION AND REFRACTIVE INDEX OF GA1-XALXAS DETERMINED BY ELLIPSOMETRYKUPHAL E; DINGES HW.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 6; PP. 4196-4200; BIBL. 27 REF.Article
OPTICAL PROPERTIES OF IN1-XGAXP1-Y, INP, GAAS, AND GAP DETERMINED BY ELLIPSOMETRYBURKHARD H; DINGES HW; KUPHAL E et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 655-662; BIBL. 35 REF.Article